网站地图 | English / 繁中 / 简中
   
  专业晶圆制造服务
 
专业晶圆制造服务
专业技术
专业技术总览
GaAs & GaN RF Technologies
InGaP HBT
High Linearity InGaP HBT
High Voltage and GSM InGaP HBT
VCO InGaP HBT
GaAs PHEMT
HFET
GaN HEMT
Integrated Passive Devices
THz Schottky Diode
InP HBT Technologies
GaN Power Electronics Technologies
Optoelectronics Technologies
晶圆制造服务
  首页 > 专业晶圆制造服务 > 专业技术 > GaAs & GaN RF Technologies > InGaP HBT > High Linearity InGaP HBT
 
High Linearity InGaP HBT
   
 

High Linearity InGaP HBT (P1&P2) processes with high ruggedness at the same time have been developed specifically for battery-powered high linearity power amplifier applications. High Linearity Power Amplifiers with superior performance and reliability have been demonstrated by customers for Infrastructure gain blocks, CDMA/WCDMA/TD-SCDMA, WiFi and WiMAX. Both processes have been in mass production since 2001.

Download PDF

P2 InGaP HBT for WiMAX 802.16 PA

Parameter

Typical (25 deg. C)

Frequency (GHz)

3.3

3.8

Gain (dB)

32

30

Gain Variation (dB/deg. C)

0.04

0.035

Input Return Loss (dB)

10

15

Output Return Loss (dB)

13

10

P1dB (dBm)

30

30.5

Psat (dBm)

32

32

Output Third Order Intercept (dBm)

45

45

Noise Figure

5.8

6

Supply Current (mA)

615

615

Control Current (mA)

4

4

Switching Speed: ton, toff (nS)

20

20